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In-Plane Thermal Conductivity of Radial and Planar Si/SiOx Hybrid Nanomembrane Superlattices

机译:径向和平面Si / SiOx混合纳米膜超大图的面内导热系数

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摘要

Silicon, although widely used in modern electronic devices, has not yet been implemented in thermoelectric applications mainly due to its high thermal conductivity, kappa, which leads to an extremely ldw thermoelectric energy conversion efficiency (figure of merit). Here, we present an approach to manage kappa of Si thin-film-based nanoarchitectures through the formation of radial and planar Si/SiOx hybrid nanomembrane superlattices (HNMSLs). For the radial Si/SiOx HNMSLs with various numbers of windings (1, 2, and 5 windings), we observe a continuous reduction in Ic with increasing number of windings. Meanwhile, the planar Si/SiOx HNMSL, which is fabricated by mechanically compressing a five windings, rolled-up microtube, shows the smallest in-plane thermal conductivity among all the reported values for Si-based superlattices. A theoretical model proposed within the framework of the Born von Karman lattice dynamics to quantitatively interpret the experimental data indicates that the thermal conductivity of Si/SiOx HNMSLs is to a great extent determined by the phonon processes in the SiOx layers.
机译:硅,虽然广泛用于现代电子设备,但尚未在热电应用中实现,主要是由于其高导热率Kappa,这导致了极其LDW热电能转换效率(优异图)。在这里,我们通过形成径向和平面Si / SiOx杂交纳米膜超晶格(HNMSLS)来提出一种方法来管理基于薄膜基纳米建筑的Kappa。对于具有各种数量的绕组(1,2和5绕组)的径向Si / SiOx HNMSL,我们观察IC的连续减少随着越来越多的绕组。同时,通过机械压缩五个绕组卷起微管材来制造的平面Si / SiOx HNMS1显示了基于Si的超晶格的所有报道的所有报道值中最小的面内导热系数。在出生的Von Karman格子动力学框架内提出的理论模型,以定量解释实验数据,表明Si / SiOx HNMSLs的导热率在很大程度上由SiOx层中的声子过程确定。

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