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机译:具有超薄(<2nM)聚合物涂层的多孔超导-K介电膜的表面局部密封
Korea Adv Inst Sci &
Technol Dept Elect Engn Daejeon 34141 South Korea;
Korea Adv Inst Sci &
Technol Dept Chem &
Biomol Engn Daejeon 34141 South Korea;
Yonsei Univ Sch Elect &
Elect Engn Seoul 03722 South Korea;
Lam Res Corp Fremont CA 94538 USA;
Yonsei Univ Sch Elect &
Elect Engn Seoul 03722 South Korea;
Korea Adv Inst Sci &
Technol Dept Chem &
Biomol Engn Daejeon 34141 South Korea;
Korea Adv Inst Sci &
Technol Dept Elect Engn Daejeon 34141 South Korea;
pore sealing ultralow-k dielectrics; Cu interconnects; initiated chemical vapor deposition; back-end of line process;
机译:具有超薄(<2nM)聚合物涂层的多孔超导-K介电膜的表面局部密封
机译:通过自组装单层与原子层沉积相结合多孔超级-K电介质的孔密封
机译:光刻胶剥离过程中等离子体诱导的多孔超低k介电薄膜的损伤研究
机译:通过循环引发化学气相沉积工艺对用于ULSI互连的高多孔超低k电介质进行选择性孔密封
机译:超低k介电薄膜的孔隙表征使用正电子an没光谱法。
机译:聚二胺超薄膜在云母上通过原位聚合的多巴胺与银基抗菌涂料的应用
机译:聚二胺超薄膜在云母上通过原位聚合的多巴胺与银基抗菌涂料的应用