Electronic Coupling between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties

摘要

It has been theoretically proposed that the spin textures of surface states in a topological insulator can be directly transferred to graphene by means of the proximity effect, which is very important for realizing a two-dimensional topological insulator based on graphene. Here we report the anomalous magnetotransport properties of graphene topological insulator Bi2Se3 heterojunctions, which are sensitive to the electronic. coupling between graphene and the topological surface state. The coupling between the p(z) orbitals of graphene and the p orbitals of the surface states on the Bi2Se3 bottom surface can be enhanced by applying a perpendicular negative magnetic field, resulting in a giant negative magnetoresistance at the Dirac point up to about -91%. An obvious resistance dip in the transfer curve at the Dirac point is also observed in the hybrid devices, which is consistent with theoretical predictions of the distorted Dirac bands with nontrivial spin textures inherited from the Bi2Se3 surface states.