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'Quantized' Doping of Individual Colloidal Nanocrystals Using Size-Focused Metal Quantum Clusters

机译:使用尺寸聚焦金属量子簇“量化”掺杂单个胶体纳米晶体

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摘要

The insertion of intentional impurities, commonly referred to as doping, into colloidal semiconductor quantum dots (QDs) is a powerful paradigm for tailoring their electronic, optical, and magnetic behaviors beyond what is obtained with size-control and heterostructuring motifs. Advancements in colloidal chemistry have led to nearly atomic precision of the doping level in both lightly and heavily doped QDs. The doping strategies currently available, however, operate at the ensemble level, resulting in a Poisson distribution of impurities across the QD population. To date, the synthesis of monodisperse ensembles of QDs individually doped with an identical number of impurity atoms is still an open challenge, and its achievement would enable the realization of advanced QD devices, such as optically/electrically controlled magnetic memories and intragap state transistors and solar cells, that rely on the precise tuning of the impurity states (i.e., number of unpaired spins, energy and width of impurity levels) within the QD host. The only approach reported to date relies on QD seeding with organometallic precursors that are intrinsically unstable and strongly affected by chemical or environmental degradation, which prevents the concept from reaching its full potential and makes the method unsuitable for aqueous synthesis routes. Here, we overcome these issues by demonstrating a doping strategy that bridges two traditionally orthogonal nanostructured material systems, namely, QDs and metal quantum clusters composed of a "magic number" of atoms held together by stable metal-to-metal bonds. Specifically, we use clusters composed of four copper atoms (Cu-4) capped with D-penicillamine to seed the growth of CdS QDs in water at room temperature. The elemental analysis, performed by electrospray ionization mass spectrometry, X-ray fluorescence, and inductively coupled plasma mass spectrometry, side by side with optical spectroscopy and transmission electron microscopy measurements, indicates that each Cu:CdS QD in the ensemble incorporates four Cu atoms originating from one Cu-4 cluster, which acts as a "quantized" source of dopant impurities.
机译:意图杂质的插入通常称为掺杂到胶体半导体量子点(QDS)是一种强大的范例,用于定制其电子,光学和磁性,而不是用尺寸控制和异质结构矩阵获得的。胶体化学的进步导致了掺杂掺杂QD的掺杂水平的几乎原子精度。然而,目前可用的兴奋剂策略在集合水平上运营,导致跨QD种群的杂质泊松分布。迄今为止,单独掺杂的QDS的单分散整合的合成仍然是一个开放的挑战,其成就能够实现先进的QD装置,例如光学/电控磁存储器和Intradap状态晶体管太阳能电池,依赖于QD宿主内的杂质状态的精确调谐(即,未配对的旋转,杂质水平的能量和宽度)。迄今为止迄今为止报告的唯一方法依赖于QD种子与有机金属前体均在本质上不稳定,受化学或环境降解的强烈影响,这防止了概念达到其全部潜力并使该方法不适合水性合成途径。在这里,我们通过证明桥接两个传统上正交的纳米结构材料系统的掺杂策略,即由稳定金属 - 金属键保持在一起的“神奇数”组成的QDS和金属量子簇来克服这些问题。具体地,我们使用由四个铜原子(Cu-4)组成的簇用D-青霉素覆盖,以将Cds QD在室温下的Cds QD的生长进行种子。通过电喷雾电离质谱,X射线荧光和电感耦合等离子体质谱法进行的元素分析,并排使用光学光谱和透射电子显微镜测量表明每个CU:CDS QD在整体中包含四个Cu原子来自一个Cu-4簇,其充当掺杂剂杂质的“量化”来源。

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