Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal

摘要

We report the successful fabrication of noncollinear antiferromagnetic D0(19) Mn3Ge thin films on insulating oxide substrates. The anomalous Hall effect and the large parallel negative magnetoresistance that is robust up to 53 T are observed in the thin films, which may provide evidence for the recent theoretical prediction of the existence of Weyl fermions in antiferromagnetic Mn3Ge. More importantly, we integrate the Mn3Ge thin films onto ferroelectric PMN-PT substrates and manipulate the longitudinal resistance reversibly by electric fields at room temperature, demonstrating the anisotropic magnetoresistance effect in noncollinear antiferromagnets, which thus illustrates the potential of antiferromagnetic Mn3Ge for information storage applications.