Ion Gel Capacitively Coupled Tribotronic Gating for Multiparameter Distance Sensing

摘要

Developing sophisticated device architectures is of great significance to go beyond Moore's law with versatility toward human-machine interaction and artificial intelligence. Tribotronics/tribo-iontronics offer a direct way to controlling the transport properties of semiconductor devices by mechanical actions, which fundamentally relies on how to enhance the tribotronic gating effect through device engineering. Here, we propose a universal method to enhance the tribotronic properties through electric double layer (EDL) capacitive coupling. By preparing an ion gel layer on top of tribotronic graphene transistor, we demonstrate a dual-mode field effect transistor (i.e., a tribotronic transistor with capacitively coupled ion gel and an ion-gel-gated graphene transistor with a second tribotronic gate). The resulted tribotronic gating performances are greatly improved by twice for the on-state current and four times for the on/off ratio (the first mode). It can also be utilized as a multiparameter distance sensor with drain current increased by similar to 600 mu A and threshold voltage shifted by similar to 0.8 V under a mechanical displacement of 0.25 mm (the second mode). The proposed methodology of EDL capacitive coupling offers a facile and ef f icient way to designing more sophisticated tribotronic devices with superior performance and multifunctional sensations.