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机译:超高速,超高高效的IngaN微发光二极管(MU LED),具有窄谱线宽度
Univ Sheffield Dept Elect &
Elect Engn Sheffield S1 3JD S Yorkshire England;
Univ Sheffield Dept Elect &
Elect Engn Sheffield S1 3JD S Yorkshire England;
Univ Sheffield Dept Elect &
Elect Engn Sheffield S1 3JD S Yorkshire England;
Univ Sheffield Dept Elect &
Elect Engn Sheffield S1 3JD S Yorkshire England;
Univ Sheffield Dept Elect &
Elect Engn Sheffield S1 3JD S Yorkshire England;
Univ Sheffield Dept Elect &
Elect Engn Sheffield S1 3JD S Yorkshire England;
Univ Sheffield Dept Elect &
Elect Engn Sheffield S1 3JD S Yorkshire England;
mu LEDs; selective overgrowth; InGaN/GaN; distributed Bragg reflector; external quantum efficiency; dry-etching;
机译:超高速,超高高效的IngaN微发光二极管(MU LED),具有窄谱线宽度
机译:使用芴基的红色,绿色,蓝色和白色发光聚合物覆盖膜对InGaN紫外线微阵列发光二极管进行光谱转换
机译:具有小波长漂移和窄谱线宽的绿色半极性(2021)InGaN发光二极管
机译:来自谐振腔发光二极管(RCLED)的非常窄的光谱宽度,适用于1.3μm和1.55μm的波分复用
机译:用于磷光体转换的白光发光二极管的窄线宽磷光体。
机译:超小超紧凑和超高效InGaN光谱线窄的微型发光二极管(μLED)宽度
机译:发光二极管:高效的光谱稳定红钙钛矿发光二极管(ADV。Mater。20/2018)
机译:普通照明固态照明的承诺:发光二极管(LED)和有机发光二极管(OLED)