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Direct Growth of Light-Emitting III-V Nanowires on Flexible Plastic Substrates

机译:柔性塑料基材上的发光III-V纳米线的直接生长

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摘要

Semiconductor nanowires are routinely grown on high-priced crystalline substrates as it is extremely challenging to grow directly on plastics and flexible substrates due to high-temperature requirements and substrate preparation. At the same time, plastic substrates can offer many advantages such as extremely low price, light weight, mechanical flexibility, shock and thermal resistance, and biocompatibility. We explore the direct growth of high-quality III-V nanowires on flexible plastic substrates by metal-organic vapor phase epitaxy (MOVPE). We synthesize InAs and InP nanowires on polyimide and show that the fabricated NWs are optically active with strong light emission in the mid-infrared range. We create a monolithic flexible nanowire-based p-n junction device on plastic in just two fabrication steps. Overall, we demonstrate that III-V nanowires can be synthesized directly on flexible plastic substrates inside a MOVPE reactor, and we believe that our results will further advance the development of the nanowire-based flexible electronic devices.
机译:半导体纳米线在高价晶体基材上常规生长,因为由于高温要求和衬底制备,直接在塑料和柔性基板上直接生长。同时,塑料基材可以提供许多优点,如极低的价格,重量轻,机械柔韧性,休克和热阻,以及生物相容性。通过金属 - 有机气相外延(MOVPE),我们探讨了柔性塑料基材上的高质量III-V纳米线的直接生长。我们在聚酰亚胺上合成INA和INP纳米线,表明制造的NW在中红外范围内具有强烈发光的光学活性。我们在塑料上仅在两个制造步骤中创建了一种基于整体柔性纳米线的P-N结装置。总的来说,我们证明III-V纳米线可以直接在MOVPE反应器内的柔性塑料基板上合成,我们认为我们的结果将进一步推进基于纳米线的柔性电子设备的开发。

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