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首页> 外文期刊>ACS nano >Solving the 'MoS2 Nanotubes' Synthetic Enigma and Elucidating the Route for Their Catalyst-Free and Scalable Production
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Solving the 'MoS2 Nanotubes' Synthetic Enigma and Elucidating the Route for Their Catalyst-Free and Scalable Production

机译:求解“MOS2纳米管”的合成谜,并阐明途径,以获得催化剂和可扩展的生产

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This study solves a more than two-decades-long "MoS2 Nanotubes" synthetic enigma: the futile attempts to synthesize inorganic nanotubes (INTs) of MoS2 via vapor-gas-solid (VGS) reaction. Among them was replication of the recently reported pure-phase synthesis of the analogous INT-WS,. During these years, successful syntheses of spherical nanoparticles of WS2 and MoS2 were demonstrated as well. All these nanostructures were obtained by VGS reaction of corresponding oxides with H-2/H2S gases, at elevated temperatures (>800 degrees C), in a fluidized bed reactor (FBR) and a one-pot process. This success and apparent similarity between the two compounds "hid" from us the option of looking for the INT-MoS2 reaction parameters in entirely different regimes. The main challenge in the synthesis of INT-MoS2 via VGS was the instability of the in situ prepared suboxide nanowhiskers against over-reduction and recrystallization at high temperatures. The elucidated growth mechanism dictates separation of the reaction into five steps, as properties of the intermediate products are not consistent with a single process and require individual conditions for each step. A horizontal reactor with a porous-quartz reaction cell, which creates proper quasi-static (contrary to the FBR) conditions for the reaction involving sublimation, was imperative for the effective nanofabrication of INT-MoS2. These findings render a reproducible synthetic route for the production of highly crystalline pure-phase MoS2 nanotubes via a multistep VGS process, without the assistance of a catalyst and in a scalable fashion. Being a semiconductor, flexible, and strong, INT-MoS2 offers a platform for much research and numerous potential applications, particularly in the field of optoelectronics and reinforcement of polymer composites.
机译:本研究解决了一个超过二十年的“MOS2纳米管”合成谜:徒劳的尝试通过气体固体(VGS)反应合成MOS2的无机纳米管(INTS)。其中是最近报告了类似INT-WS的纯相合成的复制,。在这些年期间,还证明了WS2和MOS2的成功合成的WS2和MOS2。通过在流化床反应器(FBR)中的升高的温度(> 800℃),在流化床反应器(FBR)中,通过VGS与H-2 / H 2 S气体反应得到所有这些纳米结构。从美国的两个化合物“HID”之间的成功和表观相似之处是在完全不同的制度中寻找INT-MOS2反应参数的选择。通过VGS合成INT-MOS2的主要挑战是在高温下对原位制备的亚氧化物纳米须克通的不稳定性。阐明的生长机制决定将反应的分离成五个步骤,因为中间产物的性质与单一过程不一致并且需要每个步骤的个体条件。具有多孔 - 石英反应池的水平反应器,其产生适当的准静态(与FBR)条件用于涉及升华的反应,对于INT-MOS2的有效纳米制作势病是必需的。这些发现能够通过多步骤VGS工艺生产高度结晶的纯相MOS2纳米管的可再现合成途径,而不提供催化剂的辅助和以可伸缩的方式。作为半导体,灵活,强大,INT-MOS2提供了一种用于多种研究和许多潜在应用的平台,特别是在光电子领域以及聚合物复合材料的加固领域。

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