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Molecular Approach for Engineering Interfacial Interactions in Magnetic/Topological Insulator Heterostructures

机译:磁性/拓扑绝缘体异质结构的工程界面相互作用的分子方法

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Controlling interfacial interactions in magnetic/topological insulator heterostructures is a major challenge for the emergence of novel spin-dependent electronic phenomena. As for any rational design of heterostructures that rely on proximity effects, one should ideally retain the overall properties of each component while tuning interactions at the interface. However, in most inorganic interfaces, interactions are too strong, consequently perturbing, and even quenching, both the magnetic moment and the topological surface states at each side of the interface. Here, we show that these properties can be preserved using ligand chemistry to tune the interaction of magnetic ions with the surface states. By depositing Co-based porphyrin and phthalocyanine monolayers on the surface of Bi2Te3 thin films, robust interfaces are formed that preserve undoped topological surface states as well as the pristine magnetic moment of the divalent Co ions. The selected ligands allow us to tune the interfacial hybridization within this weak interaction regime. These results, which are in stark contrast with the observed suppression of the surface state at the first quintuple layer of Bi2Se3 induced by the interaction with Co phthalocyanines, demonstrate the capability of planar metal-organic molecules to span interactions from the strong to the weak limit.
机译:控制磁性/拓扑绝缘体异质结构中的界面相互作用是新型旋转依赖电子现象的出现的主要挑战。对于依赖于邻近效应的异质结构的任何合理设计,理想情况下应该在接口调整相互作用时理想地保留每个组件的整体特性。然而,在大多数无机界面中,相互作用太强烈,因此扰动,甚至淬火,磁矩和拓扑表面状态在界面的每一侧。在这里,我们表明可以使用配体化学保留这些性质来调整磁离子与表面状态的相互作用。通过在Bi2Te3薄膜表面上沉积基氨基卟啉和酞菁单层,形成稳健的界面,其保护未掺杂的拓扑表面状态以及二价CoIon的原始磁矩。所选配体允许我们在这种弱相互作用制度中调整界面杂交。这些结果与与CO酞菁相互作用诱导的BI2SE3诱导的BI2SE3的第一Quintuple3的表面状态抑制的结果表明了平面金属 - 有机分子以跨越弱极限的相互作用的能力。

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