Ultrafast Photodetector by Integrating Perovskite Directly on Silicon Wafer

摘要

Single-crystal (SC) perovskite is currently a promising material due to its high quantum efficiency and long diffusion length. However, the reported perovskite photodetection range (<800 nm) and response time (>10 mu s) are still limited. Here, to promote the development of perovskite-integrated optoelectronic devices, this work demonstrates wider photodetection range and shorter response time perovskite photodetector by integrating the SC CH3NH3PbBr3 (MAPbBr(3)) perovskite on silicon (Si). The Si/MAPbBr(3) heterojunction photodetector with an improved interface exhibits high-speed, broad-spectrum, and long-term stability performances. To the best of our knowledge, the measured detectable spectrum (405-1064 nm) largely expands the widest response range reported in previous perovskite-based photodetectors. In addition, the rise time is as fast as 520 ns, which is comparable to that of commercial germanium photodetectors. Moreover, the Si/MAPbBr(3) device can maintain excellent photocurrent performance for up to 3 months. Furthermore, typical gray scale face imaging is realized by scanning the Si/MAPbBr(3) single-pixel photodetector. This work using an ultrafast photodetector by directly integrating perovskite on Si can promote advances in next-generation integrated optoelectronic technology.