Band Nesting Bypass in WS2 Monolayers via Forster Resonance Energy Transfer

摘要

Two-dimensional (2D) transition-metal dichalcogenides (TMDs) have attracted intensive interest due to the direct-band-gap transition in the monolayer form, positioning them as potential next-generation materials for optoelectronic or photonic devices. However, the band-nested suppression of the recombination efficiency at higher excitation energies limits the ability to locally control and manipulate the photoluminescence of WS2 for multifunctional applications. In this work, we exploit an energy transfer method to modulate the fluorescence properties of TMDs under a larger excitation range spanning from UV to visible light. Self-assembled lanthanide (Ln)/TMD hybrids have been designed based on a low-cost and highly efficient solution-processed approach. The emission energy from Ln(3+) sources can be effectively transferred to the TMD monolayers under low power exposure (0.13 mW) at room temperature, activating the characteristic monolayer fluorescence in place of Ln(3+) emission signatures. The Ln/TMDs photonics can potentially tune the excitation of TMDs to provide variable yet controllable emissions. This provides a solution to the suppression of direct exciton recombination in monolayer TMDs at the band nesting resonant energy region. Our work on such Ln/TMD systems would overcome the limited excitation energy range in TMDs and extend their functionalities for optoelectronic or photonic applications.