Oxide Inhibitor-Assisted Growth of Single-Layer Molybdenum Dichalcogenides (MoX2, X = S, Se, Te) with Controllable Molybdenum Release

摘要

Though chemical vapor deposition (CVD) methods have been widely used in the growth of two-dimensional transition-metal dichalcogenides (2D TMDCs), the controllable fabrication of 2D TMDCs is yet hard to achieve because of the great challenge of concisely controlling the release of precursors vapor, one of the most critical growth kinetic factors. To solve this important issue, here we report the utilization of oxide inhibitors covering Mo source during CVD reactions to manipulate the release of Mo vapor. In contrast to the lack of capability of conventional CVD methods, 2D molybdenum dichalcogenide (MoX2, X = S, Se, Te) monolayers were successfully fabricated through the proposed CVD protocol with the oxide-inhibitorthis way, despite the fact that only separated MoTe2 flakes were prepared, both MoS2 (continuous but dotted) monolayer films at the scale of centimeter were obtained. The comprehensive understanding and precise control of the reaction kinetics for improved assisted growth (OIAG) strategy. In (continuous and clean) and MoSe2 presented OIAG method enables a growth of 2D MoX2.