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Lasing Action in Single Subwavelength Particles Supporting Supercavity Modes

机译:在支持超级避险模式中的单个子波长粒子中的激光动作

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摘要

On-chip light sources are critical for the realization of fully integrated photonic circuitry. So far, semiconductor miniaturized lasers have been mainly limited to sizes on the order of a few microns. Further reduction of sizes is challenging fundamentally due to the associated radiative losses. While using plasmonic metals helps to reduce radiative losses and sizes, they also introduce Ohmic losses hindering real improvements. In this work, we show that, making use of quasibound states in the continuum, or supercavity modes, we circumvent these fundamental issues and realize one of the smallest purely semiconductor nanolasers thus far. Here, the nanolaser structure is based on a single semiconductor nanocylinder that intentionally takes advantage of the destructive interference between two supported optical modes, namely Fabry-Perot and Mie modes, to obtain a significant enhancement in the quality factor of the cavity. We experimentally demonstrate the concept and obtain optically pumped lasing action using GaAs at cryogenic temperatures. The optimal nanocylinder size is as small as 500 nm in diameter and only 330 nm in height with a lasing wavelength around 825 nm, corresponding to a size-to-wavelength ratio as low as 0.6.
机译:片上光源对于实现完全集成的光子电路是至关重要的。到目前为止,半导体小型化激光器主要限于几微米的尺寸。由于相关的辐射损失,大小的进一步减少挑战。在使用等离子体金属有助于降低辐射损失和尺寸的同时,它们还引入了欧姆损失阻碍了真正的改进。在这项工作中,我们表明,在连续体内使用Quasibound状态或超级避难模式,我们将围绕这些基本问题并实现最小的纯度半导体纳米溶解器之一。这里,纳糖结构基于单个半导体纳米锗,有意利用两个支撑的光学模式,即法布里 - 珀罗和MIE模式之间的破坏性干扰,以获得腔的质量因子的显着增强。我们通过在低温温度下使用GaAs来实验展示概念并获得光学泵浦激光作用。最佳纳米夹钳尺寸直径为500nm,高度仅330nm,具有围绕825nm的激光波长,对应于尺寸到波长比至0.6。

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