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首页> 外文期刊>ACS nano >Intrinsic Properties of Suspended MoS2 on SiO2/Si Pillar Arrays for Nanomechanics and Optics
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Intrinsic Properties of Suspended MoS2 on SiO2/Si Pillar Arrays for Nanomechanics and Optics

机译:用于纳米力学和光学系统SiO2 / Si柱阵列的悬浮MOS2的固有特性

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Semiconducting two-dimensional (2D) materials, such as transition-metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain, doping, and heating is necessary, especially on the nanoscale. Here, we study clean devices consisting of membranes of single-layer MoS2 suspended on pillar arrays. Using Raman and photoluminescence spectroscopy, we have been able to extract, separate, and simulate the different contributions on the nanoscale and to correlate these to the pillar array design. This control has been used to design a periodic MoS2 mechanical membrane with a high reproducibility and to perform optomechanical measurements on arrays of similar resonators with a high-quality factor of 600 at ambient temperature, hence opening the way to multiresonator applications with 2D materials. At the same time, this study constitutes a reference for the future development of well-controlled optical emissions within 2D materials on periodic arrays with reproducible behavior. We measured a strong reduction of the MoS2 band gap induced by the strain generated from the pillars. A transition from direct to indirect band gap was observed in isolated tent structures made of MoS2 and pinched by a pillar. In fully suspended devices, simulations were performed allowing both the extraction of the thermal conductance and doping of the layer. Using the correlation between the influences of strain and doping on the MoS2 Raman spectrum, we have developed a simple, elegant method to extract the local strain in suspended and nonsuspended parts of a membrane. This opens the way to experimenting with tunable coupling between light emission and vibration.
机译:半导体二维(2D)材料,例如过渡金属二甲基甲基化物(TMDS),在纳米力学,光电子和热传输中出现。在这些领域中的每一个中,需要完全控制2D材料特性,包括应变,掺杂和加热,特别是在纳米级上。在这里,我们研究了由悬挂在柱阵列上的单层MOS2的膜组成的清洁装置。使用拉曼和光致发光光谱,我们已经能够提取,分开和模拟纳米级上的不同贡献,并将这些与柱阵列设计相关联。该控制已被用于设计具有高再现性的周期性MOS2机械膜,并在环境温度下具有高质量值为600的类似谐振器阵列上进行光学力学测量,因此用2D材料开放通向多分辨器应用的方式。与此同时,本研究构成了在具有可重复行为的周期阵列上对2D材料中良好控制的光学排放的未来发展的参考。我们测量由柱产生的应变引起的MOS2带隙的强烈减小。在由MOS2制成的隔离帐篷结构中观察到从直接到间接带隙的过渡,并被柱子夹紧。在完全悬挂的装置中,进行模拟,允许提取热敏和层的掺杂。利用应变影响与掺杂对MOS2拉曼光谱之间的相关性,我们开发了一种简单,优雅的方法来提取膜的悬浮和非悬浮件中的局部应变。这为在发光和振动之间进行了可调耦合来开辟了方法。

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