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首页> 外文期刊>ACS nano >WS2 Nanotubes, 2D Nanomeshes, and 2D In-Plane Films through One Single Chemical Vapor Deposition Route
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WS2 Nanotubes, 2D Nanomeshes, and 2D In-Plane Films through One Single Chemical Vapor Deposition Route

机译:通过一个化学气相沉积路线,通过一个化学气相沉积途径Ws2纳米管,2d纳米孔和2d面内膜

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摘要

We demonstrate a versatile, catalyst free chemical vapor deposition process on insulating substrates capable of producing in one single stream one-dimensional (1D) WO3-x suboxides leading to a wide range of substrate-supported 2H-WS2 polymorphs: a tunable class of out-of-plane (of the substrate) nanophases, with 1D nanotubes and a pure WS2, two-dimensional (2D) nano mesh (defined as a network of webbed, micron-size, few layer 2D sheets) at its extremes; and in-plane (parallel to the substrate) mono- and few-layer 2D domains. This entails a two-stage approach in which the 2WO(3) + 7S -> 2WS(2) + 3SO(2) reaction is intentionally decoupled. First, various morphologies of nanowires or nanorods of high stoichiometry, WO2.92/WO2.9 suboxides (belonging to the class of Magnai phases) were formed, followed by their sulfurization to undergo reduction to the aforementioned WS2 polymorphs. The continuous transition of WS2 from nanotubes to the out-of-plane 2D nanomesh, via intermediary, mixed 1D-2D phases, delivers tunable functional properties, for example, linear and nonlinear optical properties, such as reflectivity (linked to optical excitations in the material), and second harmonic generation (SHG) and onset of saturable absorption. The SHG effect is very strong across the entire tunable class of WS2 nanomaterials, weakest in nanotubes, and strongest in the 2D nanomesh. Furthermore, a mechanism via suboxide (WO3-x) intermediate as a possible path to 2D domain growth is demonstrated. 2D, in-plane WS2 domains grow via "self-seeding and feeding" where short WO2.92/WO2.9 nanorods provide both the nucleation sites and the precursor feedstock. Understanding the reaction path (here, in the W-O-S space) is an emerging approach toward controlling the nucleation, growth, and morphology of 2D domains and films of transition-metal dichalcogenides.
机译:我们展示了一种通用的催化剂无化学气相沉积工艺,其能够在一种单一物流一维(1D)WO3-X二氧化物中产生的绝缘基材上,所述底碱基导致宽范围的基材支撑的2H-WS2多晶型物:一个可调谐的OUT -F-平面(基质)纳米碱基,具有1D纳米管和纯WS2,二维(2D)纳米网(定义为蹼状,微米尺寸,少数薄片的网络)处于极端;在平面内(平行于基板)单层和几层2D结构域。这需要一种两级方法,其中2WO(3)+ 7S - > 2Ws(2)+ 3SO(2)反应有意地解耦。首先,形成纳米线的各种形态或高化学计量,WO2.92 / WO2.9-二氧化锰(属于麦加相类),然后进行硫化以经历还原到上述WS2多晶型物。通过中间体,混合的1D-2D相,从纳米管从纳米管的连续过渡到平面外2D naNOmsheh,例如线性和非线性光学性能,例如反射率(与光学激发有关)提供可调谐功能性质。材料)和二次谐波产生(SHG)和发作的可饱和吸收。在整个可调谐级别的WS2纳米材料中,纳米管中最弱,最强的2D纳米型,SHG效应非常强。此外,证明了通过亚氧化物(WO3-X)中间体作为可能的2D结构域生长的途径的机制。在图2D中,在短WO2.92 / WO2.9纳米棒提供核酸位点和前体原料的情况下,在平面内的WS2结构域通过“自播和饲料”产生。理解反应路径(这里,在W-O-S空间中)是控制2D域和过渡金属二甲基甲基化物膜的成核,生长和形态的新出现方法。

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