Effect of Nb doping on structural and electrical properties of homoepitaxial rutile TiO2:Nb films

摘要

Single crystalline homoepitaxial Nb doped TiO2 (TiO2:Nb) films were deposited on rutile TiO2 (r-TiO2) (001) substrates by metal organic chemical vapor deposition (MOCVD). Effect of Nb doping on structural and electrical properties of the films were studied. The maximum Hall mobility of the obtained films reached as high as 14.0 cm(2) V-1 s(-1) and the lowest resistivity of the films was 1.9 x 10(-1) Omega cm which was 7 orders of magnitude lower than that of pristine r-TiO2. The obtained films were single crystalline r-TiO2 epitaxially grown along the (001) orientation. The relationship between the structural and electrical properties was discussed. TiO2:Nb films with high mobilities may have many potential applications in the field of transparent electronic devices.