Design of Cascode Mixer Based on Bulk Injection and Switched Biasing Techniques in 180 nm CMOS Process for a High Performance Receiver Front End

摘要

A proposed cascode mixer is investigated by using bulk injection and switched biasing techniques. This design is implemented in UMC 180 nm CMOS technology with a high conversion gain, low noise figure (NF), improved voltage and power operation. To diminish the voltage drop for low voltageaction, the radio frequency (RF) stage is placed on the local oscillator (LO) stage. The bulk injection technique is used for low voltage operation as well as to provide a high conversion gain by modulating the threshold voltage of the LO stage. A switched biasing technique with the help ofa dc level shifter is implemented for lowering the noise of the design as compared to a static bias current source. The results demonstrate maximum conversion gain of 14.8 dB at 4 dBm of LO power, NF of 9.4 dB at 100 MHz of intermediate frequency (IF) and power consumption 0.6 mW from a supplyvoltage of 0.9 V with the input third order intercept point (IIP3) of –9 dBm. The area obtained from the layout of the mixer design is 0.0503 × 0.0347 mm~(2). This investigation helps to create an opportunity for designing a high performance receiver front end.