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机译:MOS_2的2H-1T相边界强电荷转移,适用于SuperB高性能储能
Department of Materials Science and Engineering National University of Singapore Singapore 117574 Singapore;
Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore;
Department of Materials Science and Engineering National University of Singapore Singapore 117574 Singapore;
Department of Materials Science and Engineering National University of Singapore Singapore 117574 Singapore;
Department of Materials Science and Engineering National University of Singapore Singapore 117574 Singapore;
Center for Programmable Materials School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore;
Department of Materials Science and Engineering National University of Singapore Singapore 117574 Singapore;
Institute of High Performance Computing A*STAR Singapore 138732 Singapore;
Department of Materials Science and Engineering National University of Singapore Singapore 117574 Singapore;
charge transfer; graphene; MoS_2; phase boundary; supercapacitors;
机译:MOS_2的2H-1T相边界强电荷转移,适用于SuperB高性能储能
机译:相变材料充电和放电的传热提高,阳光冷藏应用潜热能存储系统的尺寸优化
机译:使用商业级相变材料的复杂储热单元中的储能:对流传热边界条件的影响
机译:级联H桥储能系统运行边界的建模与分析,内部相位快速充电平衡
机译:用于电荷转移以及能量存储和转移的分子系统的理论和光谱学研究。
机译:非线性静电对液相之间转移能量的影响:电荷埋葬比Born模型便宜得多
机译:β'型双亚乙基二硫代四硫富瓦烯分子电荷转移盐的绝缘相,超导相和金属相之间的边界处的不均匀位电荷