Ferroelectric transistors with nanowire channel: Toward nonvolatile memory applications

摘要

We report the fabrication and characterization of ZnO nanowire memory devices using a ferroelectric Pb(Zr_(0.3)Ti_(0.7))O_3 (PZT) film as the gate dielectric and the charge storage medium. With a comparison to nanowire transistors based on SiO_2 gate oxide, the devices were evaluated in terms of their electric transport, retention, and endurance performance. Memory effects are observed as characterized by an eminent counterclockwise loop in I-V_g curves, which is attributed to the switchable remnant polarization of PZT. The single-nanowire device exhibits a high (up to 10~3) on/off ratio at zero gate voltage. Our results give a proof-ofprinciple demonstration of the memory application based on a combination of nanowires (as channels) and ferroelectric films (as gate oxide).