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Self-assembled monolayer-functionalized half-metallic manganite for molecular spintronics

机译:用于分子自旋电子学的自组装单层功能化半金属锰矿

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摘要

(La,Sr)MnO_ 3 manganite (LSMO) has emerged as the standard ferromagnetic electrode in organic spintronic devices due to its highly spin-polarized character and air stability. Whereas organic semiconductors and polymers have been mainly envisaged to propagate spin information, self-assembled monolayers (SAMs) have been overlooked and should be considered as promising materials for molecular engineering of spintronic devices. Surprisingly, up to now the first key step of SAM grafting protocols over LSMO surface thin films is still missing. We report the grafting of dodecyl (C12P) and octadecyl (C18P) phosphonic acids over the LSMO half-metallic oxide. Alkylphosphonic acids form ordered self-assembled monolayers, with the phosphonic group coordinated to the surface and alkyl chains tilted from the surface vertical by 43° (C12P) and 27° (C18P). We have electrically characterized these SAMs in nanodevices and found that they act as tunnel barriers, opening the door toward the integration of alkylphosphonic acid//LSMO SAMs into future molecular/organic spintronic devices such as spin OLEDs.
机译:(La,Sr)MnO_3锰(LSMO)由于其高度自旋极化特性和空气稳定性而成为有机自旋电子器件中的标准铁磁电极。尽管主要设想使用有机半导体和聚合物来传播自旋信息,但自组装单分子层(SAM)却被忽略了,应被视为自旋电子器件分子工程的有前途的材料。令人惊讶的是,到目前为止,仍然缺少在LSMO表面薄膜上进行SAM接枝方案的第一步。我们报告了在LSMO半金属氧化物上接枝了十二烷基(C12P)和十八烷基(C18P)膦酸。烷基膦酸形成有序的自组装单层,其中膦酸基团与表面配位,烷基链从表面垂直倾斜43°(C12P)和27°(C18P)。我们已经对纳米器件中的这些SAM进行了电学表征,发现它们充当隧道屏障,为将烷基膦酸// LSMO SAM集成到未来的分子/有机自旋电子器件(例如自旋OLED)中打开了大门。

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