Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments

摘要

Few-layered MoS_2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use in harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to ～1010 cm Hz~(1/2)/W), fast photoresponse (rise time of ～70 μs and fall time of ～110 μs), and high thermal stability (at a working temperature of up to 200 °C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS_2 at 532 nm is due to the high optical absorption (～10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.