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Dip-pen nanolithography of electrical contacts to single graphene flakes

机译:与单个石墨烯薄片电接触的浸笔式纳米光刻

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摘要

This study evaluates an alternative to electron-beam lithography for fabricating nanoscale graphene devices. Dip-pen nanolithography is used for defining monolayer graphene flakes and for patterning of gold electrodes through writing of an alkylthiol on thin films of gold evaporated onto graphene flakes. A wet gold etching step was used to form the individual devices. The sheet resistances of these monolayer graphene devices are comparable to reported literature values. This alternative technique for making electrical contact to 2D nanostructures provides a platform for fundamental studies of nanomaterial properties. The merits of using dip-pen nanolithography include lack of electron-beam irradiation damage and targeted patterning of individual devices with imaging and writing conducted in the same instrument under ambient conditions.
机译:这项研究评估了制造纳米级石墨烯器件的电子束光刻技术的替代方案。浸笔式纳米光刻技术用于定义单层石墨烯薄片,以及通过将烷基硫醇写入蒸镀到石墨烯薄片上的金薄膜上来构图金电极。使用湿金蚀刻步骤来形成各个器件。这些单层石墨烯器件的薄层电阻与报道的文献值相当。这种与2D纳米结构进行电接触的替代技术为纳米材料性能的基础研究提供了一个平台。使用浸笔式纳米光刻的优点包括没有电子束辐照损伤,并且可以在环境条件下在同一台仪器中进行成像和写入,从而对单个设备进行有针对性的图案化。

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