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Real-time in situ HRTEM-resolved resistance switching of Ag_2S nanoscale ionic conductor

机译:Ag_2S纳米离子导体的实时原位HRTEM分辨电阻转换

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The switching behaviors of ionic/electronic mixed conductor-based solid electrolyte nonvolatile memories have been attributed to repetitive formation and breakage of the conductive pathways inside a solid electrolyte. However, direct evidence of such pathway existences and their formations has never been provided. Herein, we reproduced the switching behavior of a Ag/Ag_2S/W sandwich structure inside a high-resolution transmission electron microscope equipped with a scanning tunneling microscope unit. The on/off current ratio of 5 orders of magnitude was documented. The in situ formation and breakage of a nanoscale conductive channel were ultimately verified in real time and under atomic resolution. We found that a conducting Ag_2S argentite phase and a Ag nanocrystal together formed the ionic and electronic conductive channel. The preferential atomic sites for Ag nanocrystal growth within the argentite phase were finally clarified.
机译:离子/电子混合导体基固体电解质非易失性存储器的开关行为已归因于固体电解质内部导电路径的重复形成和破坏。但是,从未提供这种途径的存在及其形成的直接证据。在此,我们复制了配备有扫描隧道显微镜单元的高分辨率透射电子显微镜内部的Ag / Ag_2S / W夹心结构的开关行为。记录了5个数量级的开/关电流比。最终在实时和原子分辨率下验证了纳米级导电通道的原位形成和破坏。我们发现导电的Ag_2S银水银相和Ag纳米晶体共同形成了离子和电子导电通道。最终澄清了银水银相中Ag纳米晶体生长的优先原子位。

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