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首页> 外文期刊>ACS nano >Tuning the Lattice Parameter of InxZnyP for Highly Luminescent Lattice-Matched Core/Shell Quantum Dots
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Tuning the Lattice Parameter of InxZnyP for Highly Luminescent Lattice-Matched Core/Shell Quantum Dots

机译:调整高度发光晶格匹配的核/壳量子点的InxZnyP的晶格参数

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摘要

Colloidal quantum dots (QDs) show great promise as LED phosphors due to their tunable narrow-band emission and ability to produce high-quality white light. Currently, the most suitable QDs for lighting applications are based on cadmium, which presents a toxicity problem for consumer applications. The most promising cadmium-free candidate QDs are based on InP, but their quality lags much behind that of cadmium based QDs. This is not only because the synthesis of InP QDs is more challenging than that of Cd-based QDs, but also because the large lattice parameter of InP makes it difficult to grow an epitaxial, defect-free shell on top of such material. Here, we propose a viable approach to overcome this problem by alloying InP nanocrystals with Zn2+ ions, which enables the synthesis of InxZnyP alloy QDs having lattice constant that can be tuned from 5.93 angstrom (pure InP QDs) down to 5.39 angstrom by simply varying the concentration of the Zn precursor. This lattice engineering allows for subsequent strain-free, epitaxial growth of a ZnSezS1-z shell with lattice parameters matching that of the core. We demonstrate, for a wide range of core and shell compositions (i.e., varying x, y, and z), that the photoluminescence quantum yield is maximal (up to 60%) when lattice mismatch is minimal.
机译:胶体量子点(QDs)具有可调节的窄带发射能力和产生高质量白光的能力,因此有望作为LED荧光粉。当前,最适合照明应用的量子点基于镉,这对消费类应用提出了毒性问题。最有前途的无镉候选量子点基于InP,但是它们的质量远远落后于基于镉的量子点。这不仅是因为InP QD的合成比基于Cd的QD更具挑战性,而且还因为InP的大晶格参数使其难以在此类材料的顶部生长外延,无缺陷的壳。在这里,我们提出了一种可行的方法,通过将InP纳米晶体与Zn2 +离子合金化来克服此问题,该方法可以通过简单地改变晶格常数将InxZnyP合金QD的合成范围从5.93埃(纯InP QD)降低到5.39埃来进行合成。锌前体的浓度。这种晶格工程允许随后的ZnSezS1-z壳无应变外延生长,其晶格参数与核的相匹配。我们证明,对于宽范围的核和壳组成(即,变化的x,y和z),当晶格失配最小时,光致发光量子产率最大(高达60%)。

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