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首页> 外文期刊>ACS nano >Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides
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Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides

机译:金属磷三硫属化物超薄层的弱Van der Waals堆积,宽范围带隙和拉曼研究

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摘要

2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3-3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties.
机译:二维半导体金属磷三卤化物,尤其是MPS3(M = Fe,Mn,Ni,Cd和Zn)硫化物和MPSe3(M = Fe和Mn)硒化物的块状晶体已经合成,结晶并剥落成单层。单层FePS3和3层FePSe3的拉曼光谱表明,在环境条件下,原子薄层具有很强的层内振动和结构稳定性。可以通过在1.3-3.5 eV的范围内选择元素来调整带隙。宽带隙表明其在宽波长范围内的光电应用。 MPS3的计算裂解能小于石墨。因此,通过范德华堆叠用于构建异质结构的单层膜可以被视为具有非常规铁电和磁性能的人造2D材料的候选材料。

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