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Better than 10 mA Field Emission from an Isolated Structure Emitter of a Metal Oxide/CNT Composite

机译:金属氧化物/ CNT复合材料的隔离结构发射极的场发射优于10 mA

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摘要

An isolated structure emitter is presented that can deliver a field emission better than 10 mA, a level that is by far the highest ever reported. A composite of CNT (carbon nanotube) and WO_3 is used to grow the point emitter by a crystal-like growth technique. The head of the grown needle that is the emitter is removed by electric discharge machining (EDM). The EDM treatment not only controls the length of the emitter as desired but also makes the tip of the emitter uniform. The thermal heat due to EDM treatment leads to the formation of a tungsten carbide phase, which results in a 3 orders of magnitude reduction in contact resistance. The point emitter is robust in its stability, as evidenced by its on-time resilience against a severe bias test.
机译:提出了一种隔离结构的发射器,该发射器可以提供优于10 mA的场发射,这是迄今为止报道的最高水平。 CNT(碳纳米管)和WO_3的复合材料用于通过类晶体生长技术来生长点发射器。通过放电加工(EDM)去除生长的针头(即发射器)的头部。 EDM处理不仅可以根据需要控制发射器的长度,还可以使发射器的尖端均匀。由于EDM处理而产生的热能导致碳化钨相的形成,从而导致接触电阻降低3个数量级。点发射器的稳定性很强,其针对严重偏差测试的及时恢复能力证明了这一点。

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