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首页> 外文期刊>ACS nano >Controlling vertical morphology within the active layer of organic photovoltaics using poly(3-hexylthiophene) nanowires and phenyl-C _(61)-butyric acid methyl ester
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Controlling vertical morphology within the active layer of organic photovoltaics using poly(3-hexylthiophene) nanowires and phenyl-C _(61)-butyric acid methyl ester

机译:使用聚(3-己基噻吩)纳米线和苯基-C _(61)-丁酸甲酯控制有机光伏活性层内的垂直形态

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In this study, we demonstrate how the vertical morphology of bulk heterojunction solar cells, with an active layer consisting of self-assembled poly(3-hexylthiophene) (P3HT) nanowires and phenyl-C_(61)-butyric acid methyl ester (PCBM), can be beneficially influenced. Most device fabrication routes using similar materials employ an annealing step to influence active layer morphology, but this process can create an unfavorable phase migration where P3HT is driven toward the top of the active layer. In contrast, we demonstrate devices that exhibit an increase in relative fullerene concentration at the top of the active layer by introducing the donor phase as a solid nanowire in the active layer solution and altering the pre-spin drying time. X-ray photoelectron spectroscopy and conductive and photoconductive atomic force microscopy provide detailed images of how the surface of the active layer can be influenced; this is done by tracking the concentration and alignment of P3HT and PCBM domains. Using this new procedure, devices are made with power conversion efficiencies surpassing 2%. Additionally, we show that nanowires grown in the presence of the fullerene perform differently than those that are grown and mixed separately; exposure to the nanowire during self-assembly may allow the fullerene to coat nanowire surfaces and influence the photocurrent within the device.
机译:在这项研究中,我们演示了具有由自组装聚(3-己基噻吩)(P3HT)纳米线和苯基-C_(61)-丁酸甲酯(PCBM)组成的有源层的整体异质结太阳能电池的垂直形态,可能会受到有益的影响。大多数使用类似材料的器件制造路线都采用退火步骤来影响有源层的形态,但是此过程会产生不利的相迁移,其中P3HT被驱向有源层的顶部。相比之下,我们通过在活性层溶液中引入供体相作为固体纳米线并改变预旋干燥时间,展示了在活性层顶部相对富勒烯浓度增加的器件。 X射线光电子能谱以及导电和光电导原子力显微镜提供了有关如何影响活性层表面的详细图像。这是通过跟踪P3HT和PCBM域的浓度和排列来完成的。使用这一新程序,可以制造出功率转换效率超过2%的设备。此外,我们证明了在富勒烯存在下生长的纳米线与单独生长和混合的纳米线的性能不同。自组装过程中暴露于纳米线可能会使富勒烯覆盖纳米线表面并影响器件内的光电流。

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