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Pulsed growth of vertically aligned nanotube arrays with variable density

机译:可变密度垂直排列的纳米管阵列的脉冲生长

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摘要

The density of vertically aligned carbon nanotube arrays is shown to vary significantly during normal growth by chemical vapor deposition and respond rapidly to changes in feedstock flux. Pulsing the feedstock gas to repeatedly stop and start nanotube growth is shown to induce density variations up to a factor of 1.6 within ca. 1-2 μm long layers, allowing the synthesis of new array architectures with distinct regions of controllable length and density variation. Z-Contrast scanning transmission electron microscopy of corresponding sections of the arrays is used to provide unambiguous measurements of these density variations. Time-resolved optical reflectivity measurements of the height and optical extinction coefficient of the growing arrays are shown to provide a real-time diagnostic of both array density and growth kinetics.
机译:垂直排列的碳纳米管阵列的密度在正常生长过程中通过化学气相沉积显示出显着变化,并对原料通量的变化做出快速响应。脉冲化原料气以重复停止和开始纳米管的生长显示出可引起密度变化,最大密度约为1.6倍。 1-2μm长的层,可以合成具有可控制的长度和密度变化的不同区域的新阵列架构。阵列相应部分的Z对比扫描透射电子显微镜用于提供这些密度变化的明确测量。显示了生长阵列的高度和消光系数的时间分辨光学反射率测量值,可提供阵列密度和生长动力学的实时诊断。

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