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首页> 外文期刊>ACS nano >n-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings
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n-Type Bi2Te3-xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings

机译:宽频声子散射和增能载流子驱动的具有增强的热电效率的n型Bi2Te3-xSex纳米板

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摘要

Driven by the prospective applications of thermoelectric materials, massive efforts have been dedicated to enhancing the conversion efficiency. The latter is governed by the figure of merit (ZT), which is proportional to the power factor (S-2 sigma) and inversely proportional to the thermal conductivity (kappa). Here, we demonstrate the synthesis of high-quality ternary Bi2Te3-xSex nanoplates using a microwave-assisted surfactant-free solvothermal method. The obtained n-type Bi2Te2.7Se0.3 nanostructures exhibit a high ZT of 1.23 at 480 K measured from the corresponding sintered pellets, in which a remarkably low kappa and a shift of peak S-2 sigma to high temperature are observed. By detailed electron microscopy investigations, coupled with theoretical analysis on phonon transports, we propose that the achieved kappa reduction is attributed to the strong wide-frequency phonon scatterings. The shifting of peak S-2 sigma to high temperature is due to the weakened temperature dependent transport properties governed by the synergistic carrier scatterings and the suppressed bipolar effects by enlarging the band gap.
机译:在热电材料的预期应用的推动下,人们致力于提高转换效率。后者由品质因数(ZT)决定,品质因数(ZT)与功率因数(S-2 sigma)成正比,与热导率(kappa)成反比。在这里,我们演示了使用微波辅助的无表面活性剂溶剂热法合成高质量的三元Bi2Te3-xSex纳米板。从相应的烧​​结球团测得,获得的n型Bi 2 Te 2.7 Se 0.3纳米结构在480K下显示出1.23的高ZT,其中观察到非常低的κ和峰S-2σ向高温的移动。通过详细的电子显微镜研究,以及对声子输运的理论分析,我们建议实现的κ降低归因于强的宽频声子散射。峰S-2 sigma向高温的移动是由于由协同载流子散射控制的依赖温度的传输特性减弱,以及通过增大带隙而抑制了双极性效应。

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