Charge control of surface dangling bonds using nanoscale Schottky contacts

摘要

Titanium silicide (TiSi_2) nanoscale Schottky contacts were prepared on hydrogen-terminated n-type Si (100) surfaces. The Schottky contact created a region of upward band bending surrounding the TiSi_2 contacts. The surface band bending was observed as a sloping surface depression using the scanning tunneling microscope. Scanning tunneling spectroscopy measurements also show shifted I/V data consistent with upward band bending. Charge control of dangling bonds was accomplished through a distance relationship between the dangling bond and the TiSi_2 contact. The lowered chemical potential in the near contact region removes the ability of dangling bonds to become negatively charged while dangling bonds outside the close contact region remain fully charged. Methods to actively control dangling bond charge states are discussed.