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Electrochemical synthesis of morphology-controlled segmented CdSe nanowires

机译:形态学控制的分段CdSe纳米线的电化学合成

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Morphology, that is, the study of form comprising shape, size, and structure, is important for materials research in general. For nanostructured materials, popularly known as nanomaterials, morphology has a special significance since form, in this case, dictates physical and chemical properties. Unlike bulk materials, properties of nanomaterials are strongly correlated to form. Here, we present a novel strategy for the synthesis of morphology-controlled segmented CdSe semiconductor nanowires based on a straightforward sweep voltammetry approach of preprogrammed characteristics. It was found here that, by simply and simultaneously modulating the basic parameters of each cyclic voltammetry cycle during the nanowire growth process, scan rate, and cycle potential range, we can achieve a precise control over the morphology of the semiconductor material segment, density, and dimensions, obtained after each voltammetric cycle. The morphology of CdSe segments was found to be controlled by the extent of co-deposition of metal cadmium together with the deposition of CdSe. Thus "dense" CdSe segments and "nondense" segments can be achieved in the absence and presence of cadmium metal co-deposition, respectively. Accompanied by the density modulation achieved by the potential range applied, it was also observed that a fine control over each segment's length, varying between few tenths to few hundred nanometers, can be achieved by simple altering the scan rate of each cycle along the wire. Also, we propose a simple mechanism that accounts for the formation of segments of controlled morphology. This is the first report on the synthesis of "segmented" CdSe nanowires of controlled morphology, density, and length of each segment, by simple single-step cycle voltammetry preprogrammed sequences from a single electrodeposition solution. In addition, this novel strategy may be applied for the synthesis of additional analogue semiconductor materials of importance (e.g., CdS, CdTe, etc.). This segmented nanowire's synthetic route is remarkably fast and simple, leading to a high encoding capacity with a large number of distinguishable signatures.
机译:通常,形态学,即包括形状,大小和结构的形式的研究,对于材料研究通常很重要。对于通常被称为纳米材料的纳米结构材料,形态具有特殊的意义,因为在这种情况下,形态决定了物理和化学性质。与块状材料不同,纳米材料的性质与形成紧密相关。在这里,我们提出了一种基于预先编程的特征的直接扫描伏安法合成形态控制的分段CdSe半导体纳米线的新策略。在这里发现,通过简单而同时地调节纳米线生长过程中每个循环伏安循环的基本参数,扫描速度和循环电位范围,我们可以实现对半导体材料段的形态,密度,和尺寸,在每个伏安循环后获得。发现CdSe片段的形态受金属镉共沉积程度和CdSe沉积的控制。因此,可以分别在不存在和存在镉金属共沉积的情况下实现“致密” CdSe片段和“非致密”片段。伴随着所施加的电位范围所实现的密度调制,还观察到,通过简单地改变沿导线的每个周期的扫描速率,就可以实现对每个段长度的精确控制,其变化范围在十分之几到几百纳米之间。此外,我们提出了一种简单的机制,可以解释受控形态学片段的形成。这是关于通过单个电沉积溶液中的简单单步循环伏安法预编程序列合成可控制形态,密度和每个片段长度的“片段” CdSe纳米线的第一份报告。另外,这种新颖的策略可以用于合成其他重要的模拟半导体材料(例如,CdS,CdTe等)。这种分段的纳米线的合成路线非常快速且简单,从而导致具有大量可区分特征的高编码能力。

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