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Diffusion limited photoluminescence quantum yields in 1-D semiconductors: Single-wall carbon nanotubes

机译:一维半导体中的扩散受限的光致发光量子产率:单壁碳纳米管

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摘要

Photoluminescence quantum yields and nonradiative decay of the excitonic S1 state in length fractionated (6,5) single-wall carbon nanotubes (SWNTs) are studied by continuous wave and time-resolved fluorescence spectroscopy. The experimental data are modeled by diffusion limited contact quenching of excitons at stationary quenching sites including tube ends. A combined analysis of the time-resolved photoluminescence decay and the length dependence of photoluminescence quantum yields (PL QYs) from SWNTs in sodium cholate suspensions allows to determine the exciton diffusion coefficient D = 10.7 ± 0.4 cm2s-1 and lifetime ΦPL for long tubes of 20 ± 1 ps. PL quantum yields φPL are found to scale with the inverse diffusion coefficient and the square of the mean quenching site distance, here ld = 120 ± 25 nm. The results suggest that low PL QYs of SWNTs are due to the combination of high-diffusive exciton mobility with the presence of only a few quenching sites.
机译:通过连续波和时间分辨荧光光谱研究了长度分级的(6,5)单壁碳纳米管(SWNTs)中激子S1状态的光致发光量子产率和非辐射衰减。实验数据通过激子在包括管端在内的固定淬火部位的扩散有限接触淬火来建模。对时间分辨的光致发光衰减和胆酸钠悬浮液中SWNT的光致发光量子产率(PL QYs)的长度依赖性进行综合分析,可以确定长管长度的激子扩散系数D = 10.7±0.4 cm2s-1和寿命ΦPL。 20±1 ps。发现PL量子产率φPL与反扩散系数和平均淬火位点距离的平方成比例,此处ld = 120±25 nm。结果表明,SWNT的PL QY低是由于高扩散激子迁移率与仅存在几个淬灭位点的结合所致。

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