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Absorption cross section and interfacial thermal conductance from an individual optically excited single-walled carbon nanotube

机译:单个光学激发单壁碳纳米管的吸收截面和界面热导

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摘要

The heat generation and dissipation of an individual optically excited metallic single-walled carbon nanotube is characterized using a thermal sensor thin film of Al_(0.94)Ga_(0.06)N embedded with Er~(3+). The absorption cross section from an individual SWCNT excited at 532 nm is revealed from the steady-state temperature of the thermal sensor film. A maximum temperature of 4.3 K is observed when the SWCNT is excited with parallel polarization and an average intensity of 7 × 10~(10) W/m ~2. From this temperature measurement, we determine an absorption cross section for the SWCNT of 9.4 × 10~(-17) m~2/μm using parallel polarization and 2.4 × 10~(-17) m~2/μm for perpendicular polarization. We establish a temperature difference between the SWCNT and the substrate of 315 K by converting the G band shift of the SWCNT into the local SWCNT temperature and scaling the measured film temperature to the local non-resolution-limited temperature rise. From the temperature difference and heat flux, we deduce a value of 6.6 MW/m~2~·K for the thermal interfacial conductance of a SWCNT sitting on a thin film of amorphous Al_(0.94)Ga_(0.06)N.
机译:使用嵌入有Er〜(3+)的Al_(0.94)Ga_(0.06)N的热传感器薄膜来表征单个光学激发金属单壁碳纳米管的发热和散热。从热传感器膜的稳态温度可以看出在532 nm激发的单个SWCNT的吸收截面。当SWCNT以平行极化激发且平均强度为7×10〜(10)W / m〜2时,观察到最高温度为4.3K。根据该温度测量结果,我们确定使用平行极化的SWCNT的吸收截面为9.4×10〜(-17)m〜2 /μm,对于垂直极化的SWCNT的吸收截面为2.4×10〜(-17)m〜2 /μm。通过将SWCNT的G带移转换为局部SWCNT温度,并将测得的薄膜温度缩放至局部非分辨率限制的温度上升,我们可以建立SWCNT与315 K基板之间的温差。根据温度差和热通量,我们得出了位于非晶Al_(0.94)Ga_(0.06)N薄膜上的SWCNT的热界面电导值为6.6 MW / m〜2〜·K。

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