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首页> 外文期刊>ACS nano >Nanoimprint-induced molecular orientation in semiconducting polymer nanostructures
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Nanoimprint-induced molecular orientation in semiconducting polymer nanostructures

机译:半导体聚合物纳米结构中纳米压印诱导的分子取向

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摘要

The morphology and orientation of thin films of the polymer poly-3(hexylthiophene)-important parameters influencing electronic and photovoltaic device performance-have been significantly altered through nanoimprinting with 100 nm spaced grooves. Grazing-incidence small-angle X-ray scattering studies demonstrate the excellent fidelity of the pattern transfer, while wide-angle scattering convincingly shows an imprinting-induced π-π reorientation and polymer backbone alignment along the imprinted grooves. Surprisingly, temperature-dependent scattering measurements indicate that the imprinted induced orientation and alignment remain intact even at temperatures where the imprinted topographical features nearly vanish.
机译:通过以100 nm间隔的凹槽进行纳米压印,已明显改变了影响电子和光伏器件性能的重要参数聚合物3(己基噻吩)的薄膜的形态和取向。掠入射小角X射线散射研究表明图案转印具有出色的保真度,而广角散射令人信服地显示出印迹引起的π-π重取向和聚合物主链沿印迹凹槽的排列。出乎意料的是,与温度有关的散射测量表明,即使在所印记的形貌特征几乎消失的温度下,所印记的诱导取向和对准也保持完整。

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