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High-quality ZnO nanowire arrays directly fabricated from photoresists

机译:直接由光致抗蚀剂制造的高质量ZnO纳米线阵列

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摘要

We report a simple and effective method for fabricating and patterning high-quality ZnO nanowire arrays using carbonized photoresists to control the nudeation site, density, and growth direction of the nanowires. The ZnO nanowires fabricated using this method show excellent alignment, crystal quality, and optical properties that are independent of the substrates. The carbonized photoresists provide perfect nudeation sites for the growth of aligned ZnO nanowires and they also perfectly connect to the nanowires to form ideal electrodes that can be used in many applications of ZnO nanomaterials.
机译:我们报告了一种简单有效的方法,用于使用碳化光致抗蚀剂来控制纳米线的裸露部位,密度和生长方向,以制造和图案化高质量ZnO纳米线阵列。使用此方法制造的ZnO纳米线显示出​​优异的取向,晶体质量和光学特性,而与基材无关。碳化的光致抗蚀剂为对齐的ZnO纳米线的生长提供了理想的裸露部位,并且它们还完美地连接到纳米线以形成理想的电极,可用于ZnO纳米材料的许多应用。

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