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首页> 外文期刊>ACS nano >Highly conducting patterned Pd nanowires by direct-write electron beam lithography
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Highly conducting patterned Pd nanowires by direct-write electron beam lithography

机译:通过直接写入电子束光刻技术获得高导电性的图案化Pd纳米线

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摘要

Palladium hexadecylthiolate is shown to serve as a negative-tone direct-write electron resist to produce nanopatterns down to 30 nm. The written patterns do not deviate much from the precursor inc composition, while a post-treatment at 230 °C in air produced metallic Pd nanowires with residual carbon less than 10% and resistivity dose to the bulk value, a desirable property of interconnects in nanocircuitry. The as-written patterns contain small nanocrystals (<5 nm) in a hydrocarbon matrix, which upon annealing aggregate to form well-connected networks of larger nanocrystals (5-15 nm), thus giving rise to metallic conductivity.
机译:十六烷基硫醇钯显示出可作为负型直写式电子抗蚀剂,可产生低至30 nm的纳米图案。所写的图案与前驱体inc的成分相差不大,而在空气中在230°C下进行后处理则产生的金属Pd纳米线的残留碳小于10%,电阻率达到整体值,这是纳米电路中互连的理想特性。所写的图案在烃基体中包含小的纳米晶体(<5 nm),退火后聚集在一起形成较大纳米晶体(5-15 nm)的良好连接的网络,从而产生金属导电性。

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