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Synthesis of nitrogen-doped graphene films for lithium battery application

机译:锂电池用氮掺杂石墨烯薄膜的合成

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摘要

We demonstrate a controlled growth of nitrogen-doped graphene layers by liquid precursor based chemical vapor deposition (CVD) technique. Nitrogen-doped graphene was grown directly on Cu current collectors and studied for its reversible Li-ion intercalation properties. Reversible discharge capacity of N-doped graphene is almost double compared to pristine graphene due to the large number of surface defects induced due to N-doping. All the graphene films were characterized by Raman spectroscopy, transmission electron microscopy, and X-ray photoemission spectroscopy. Direct growth of active electrode material on current collector substrates makes this a feasible and efficient process for integration into current battery manufacture technology.
机译:我们通过基于液体前驱物的化学气相沉积(CVD)技术演示了氮掺杂石墨烯层的受控生长。氮掺杂石墨烯直接在铜集流体上生长,并研究了其可逆的锂离子嵌入特性。与原始石墨烯相比,N掺杂石墨烯的可逆放电容量几乎是其两倍,这是由于N掺杂引起的大量表面缺陷所致。所有的石墨烯薄膜都通过拉曼光谱,透射电子显微镜和X射线光发射光谱进行了表征。活性电极材料在集电器基板上的直接生长使其成为整合到当前电池制造技术中的可行而有效的过程。

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