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Red-to-Ultraviolet Emission Tuning of Two-Dimensional Gallium Sulfide/Selenide

机译:二维硫化镓/硒化物的红至紫外发射调谐

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摘要

Graphene-like two-dimensional (2D) nanostructures have attracted significant attention because of their unique quantum confinement effect at the 2D limit. Multi layer nanosheets of GaS GaSe alloy are found to have a band gap (E-g) of 2.0-2.5 eV that linearly tunes the emission in red-to-green. However, the epitaxial growth of monolayers produces a drastic increase in this E-g to 3.3-3.4 eV, which blue-shifts the emission to the UV region. First-principles calculations predict that the E-g of these GaS and GaSe monolayers should be 3.325 and 3.001 eV, respectively. As the number of layers is increased to three, both the direct/indirect E-g decrease significantly; the indirect E-g approaches that of the multilayers. Oxygen adsorption can cause the direct/indirect E-g of GaS to converge, resulting in monolayers with a strong emission. This wide E-g tuning over the visible-to-UV range could provide an insight for the realization of full-colored flexible and transparent light emitters and displays.
机译:像石墨烯一样的二维(2D)纳米结构因其在2D极限处的独特量子限制效应而备受关注。发现GaS GaSe合金多层纳米片的带隙(E-g)为2.0-2.5 eV,可线性调节红到绿的发射。然而,单层的外延生长使E-g急剧增加至3.3-3.4 eV,这使发射蓝移到了UV区。第一性原理计算预测,这些GaS和GaSe单层的E-g分别应为3.325 eV和3.001 eV。随着层数增加到三层,直接/间接E-g均显着下降;间接E-g接近多层膜。氧气的吸附会导致GaS的直接/间接E-g会聚,从而导致单层发射很强。这种在可见光到紫外光范围内的宽E-g调谐可以为实现全色柔性和透明发光体和显示器提供见识。

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