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Impact of Contact on the Operation and Performance of Back-Gated Monolayer MoS2 Field-Effect-Transistors

机译:接触对背栅单层MoS2场效应晶体管工作和性能的影响

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摘要

Metal contacts to atomically thin two-dimensional (2D) crystal based FETs play a decisive role in determining their operation and performance. However, the effects of contacts on the switching behavior, field-effect mobility, and current saturation of monolayer MoS2 FETs have not been well explored and, hence, is the focus of this work. The dependence of contact resistance on the drain current is revealed by four-terminal-measurements. Without high-kappa dielectric boosting, an electron mobility of 44 cm(2)/(V.s) has been achieved in a monolayer MoS2 FET on SiO2 substrate at room temperature. Velocity saturation is identified as the main mechanism responsible for the current saturation in back-gated monolayer MoS2 FETs at relatively higher carrier densities. Furthermore, for the first time, electron saturation velocity of monolayer MoS2 is extracted at high-field condition.
机译:基于原子薄的二维(2D)晶体的FET的金属触点在确定其工作和性能方面起着决定性的作用。但是,尚未充分研究触点对单层MoS2 FET的开关行为,场效应迁移率和电流饱和的影响,因此,这是这项工作的重点。接触电阻对漏极电流的依赖性通过四端测量来揭示。在没有高κ介电增强的情况下,室温下在SiO2衬底上的单层MoS2 FET中已实现44 cm(2)/(V.s)的电子迁移率。速度饱和被认为是负责相对较高载流子密度的背栅单层MoS2 FET中电流饱和的主要机制。此外,首次在高场条件下提取单层MoS2的电子饱和速度。

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