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首页> 外文期刊>ACS nano >Synthesis of Multishell Nanoplates by Consecutive Epitaxial Growth of Bi2Se3 and Bi2Te3 Nanoplates and Enhanced Thermoelectric Properties
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Synthesis of Multishell Nanoplates by Consecutive Epitaxial Growth of Bi2Se3 and Bi2Te3 Nanoplates and Enhanced Thermoelectric Properties

机译:连续外延生长Bi2Se3和Bi2Te3纳米板并增强热电性能合成多壳纳米板

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摘要

We herein demonstrate the successive epitaxial growth of Bi2Te3 and Bi2Se3 on seed nanoplates for the scalable synthesis of heterostructured nanoplates (Bi2Se3@Bi2Te3) and multishell nanoplates (Bi2Se3@Bi2Te3@Bi2Se3, Bi2Se3@Bi2Te3@Bi2Se3@Bi2Te3). The relative dimensions of the constituting layers are controllable via the molar ratios of the precursors added to the seed nanoplate solution. Reduction of the precursors produces nanoparticles that attach preferentially to the sides of the seed nanoplates. Once attached, the nanoparticles reorganize epitaxially on the seed crystal lattices to form single-crystalline core-shell nanoplates. The nanoplates, initially 100 nm wide, grew laterally to 620 nm in the multishell structure, while their thickness increased more moderately, from 5 to 20 nm. The nanoplates were pelletized into bulk samples by spark plasma sintering and their thermoelectric properties are compared. A peak thermoelectric figure of merit (ZT) similar to 0.71 was obtained at 450 K for the bulk of Bi2Se3@Bi2Te3 nanoplates by simultaneous modulation of electronic and thermal transport in the presence of highly dense grain and phase boundaries.
机译:我们在本文中证明了Bi2Te3和Bi2Se3在种子纳米板上的连续外延生长,用于可扩展合成异质结构纳米板(Bi2Se3 @ Bi2Te3)和多壳纳米板(Bi2Se3 @ Bi2Te3 @ Bi2Se3,Bi2Se3 @ Bi2Te3 @ Bi2Se3 @ Bi2Te3)。构成层的相对尺寸可通过添加至种子纳米板溶液中的前体的摩尔比来控制。还原前体可产生优先附着在种子纳米板侧面的纳米颗粒。一旦附着,纳米颗粒在籽晶晶格上外延重组,形成单晶核-壳纳米板。最初为100 nm宽的纳米板在多壳结构中横向生长至620 nm,而其厚度则从5 nm逐渐增加到20 nm,并逐渐增加。通过火花等离子体烧结将纳米板造粒成块状样品,并比较它们的热电性能。通过在高密度晶粒和相界存在的同时对电子和热传输进行同时调制,在450 K下获得了峰值为0.71的峰值热电品质因数(ZT),用于大部分Bi2Se3 @ Bi2Te3纳米板。

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