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Efficient Transfer Doping of Carbon Nanotube Forests by MoO3

机译:MoO3对碳纳米管森林的有效转移掺杂

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摘要

We dope nanotube forests using evaporated MoO3 and observe the forest resistivity to decrease by 2 orders of magnitude, reaching values as low as similar to 5 x 10(-5) Omega cm, thus approaching that of copper. Using in situ photoemission spectroscopy, we determine the minimum necessary MoO3 thickness to dope a forest and study the underlying doping mechanism. Homogenous coating and tube compaction emerge as key factors for decreasing the forest resistivity. When all nanotubes are fully coated with MoO3 and packed, conduction channels are created both inside the nanotubes and on the outside oxide layer. This is supported by density functional theory calculations, which show a shift of the Fermi energy of the nanotubes and the conversion of the oxide into a layer of metallic character. MoO3 doping removes the need for chirality control during nanotube growth and represents a step forward toward the use of forests in next-generation electronics and in power cables or conductive polymers.
机译:我们使用蒸发的MoO3掺杂纳米管森林,观察到森林的电阻率下降了2个数量级,其值低至与5 x 10(-5)Ω厘米相似,从而接近了铜。使用原位光发射光谱法,我们确定了掺杂森林所需的最小MoO3厚度,并研究了潜在的掺杂机理。均质的涂层和管材压实成为降低森林电阻率的关键因素。当所有纳米管都完全涂有MoO3并堆积时,在纳米管内部和外部氧化层上都会形成导电通道。这得到密度泛函理论计算的支持,该计算表明纳米管的费米能发生了转移,并且氧化物转化为具有金属特性的层。 MoO3掺杂消除了在纳米管生长过程中对手性进行控制的需要,这代表了朝着在下一代电子产品,电力电缆或导电聚合物中使用森林迈出的一步。

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