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Bond length and charge density variations within extended arm chair defects in graphene

机译:石墨烯延伸臂缺陷中的键长和电荷密度变化

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摘要

Extended linear arm chair defects are intentionally fabricated in suspended monolayer graphene using controlled focused electron beam irradiation. The atomic structure is accurately determined using aberration-corrected transmission electron microscopy with monochromation of the electron source to achieve ~80 pm spatial resolution at an accelerating voltage of 80 kV. We show that the introduction of atomic vacancies in graphene disrupts the uniformity of C-C bond lengths immediately surrounding linear arm chair defects in graphene. The measured changes in C-C bond lengths are related to density functional theory (DFT) calculations of charge density variation and corresponding DFT calculated structural models. We show good correlation between the DFT predicted localized charge depletion and structural models with HRTEM measured bond elongation within the carbon tetragon structure of graphene. Further evidence of bond elongation within graphene defects is obtained from imaging a pair of 5-8-5 divacancies.
机译:使用受控的聚焦电子束辐照,有意在悬浮的单层石墨烯中制造了扩展的线性扶手椅缺陷。使用像差校正的透射电子显微镜准确地确定原子结构,在80 kV的加速电压下,电子源的单色化可达到约80 pm的空间分辨率。我们表明,在石墨烯中引入原子空位会破坏立即围绕石墨烯中的线性扶手椅缺陷的C-C键长度的均匀性。 C-C键长的测量变化与电荷密度变化的密度泛函理论(DFT)计算以及相应的DFT计算的结构模型有关。我们展示了DFT预测的局部电荷消耗与结构模型之间的良好相关性,该结构模型与HRTEM测得的石墨烯碳四边形结构内的键长有关。石墨烯缺陷内键伸长的进一步证据是通过对一对5-8-5的空位进行成像获得的。

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