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Ultrafast charge transfer at monolayer graphene surfaces with varied substrate coupling

机译:具有不同衬底耦合的单层石墨烯表面超快电荷转移

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摘要

The charge transfer rates of a localized excited electron to graphene monolayers with variable substrate coupling have been investigated by the core hole clock method with adsorbed argon. Expressed as charge transfer times, we find strong variations between ~3 fs (on graphene "valleys" on Ru(0001)) to ~16 fs (quasi-free graphene on SiC, O/Ru(0001), or SiO _2/Ru). The values for the "hills" on Gr/Ru and on Gr/Pt(111) are in between, with the ratio 1.7 between the charge transfer times measured on "hills" and "valleys" of Gr/Ru. We discuss the results for Gr on metals in terms of hybridized Ru-C orbitals, which change with the relative Gr-Ru alignment and distance. The charge transfer on the decoupled graphene layers must represent the intrinsic coupling to the graphene empty π* states. Its low rate may be influenced by processes retarding the spreading of charge after transfer.
机译:通过具有吸附氩气的核孔时钟方法研究了局部激发电子向具有可变衬底耦合的石墨烯单层的电荷转移速率。用电荷转移时间表示,我们发现〜3 fs(在Ru(0001)上的石墨烯“谷”上)到〜16 fs(SiC,O / Ru(0001)或SiO _2 / Ru上的准无石墨烯)之间存在很大的差异。 )。在Gr / Ru和Gr / Pt(111)上的“希尔斯”值介于两者之间,在Gr / Ru的“希尔斯”和“谷”上测得的电荷转移时间之比为1.7。我们根据混合的Ru-C轨道讨论金属上Gr的结果,该结果随相对的Gr-Ru排列和距离而变化。去耦石墨烯层上的电荷转移必须代表与石墨烯空π*状态的本征耦合。其低速率可能受到阻碍转移后电荷扩散的过程的影响。

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