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Anodes for Sodium Ion Batteries Based on Tin-Germanium-Antimony Alloys

机译:基于锡-锗-锑合金的钠离子电池阳极

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Here we provide the first report on several compositions of ternary Sn-Ge-Sb thin film alloys for application as sodium ion battery (aka NIB, NaB or SIB) anodes, employing Sn50Ge50, Sb50Ge50, and pure Sn, Ge, Sb as baselines. Sn33Ge33Sb33, Sn50Ge25Sb25, Sn60Ge20Sb20, and Sn50Ge50 all demonstrate promising electrochemical behavior, with Sn50Ge25Sb25 being the best overall. This alloy has an initial reversible specific capacity of 833 mAhg~(-1) (at 85 mAg~(-1)) and 662 mAhg~(-1) after 50 charge-discharge cycles. Sn50Ge25Sb25 also shows excellent rate capability, displaying a stable capacity of 381 mAhg~(-1) at a current density of 8500 mAg~(-1) (~10C). A survey of published literature indicates that 833 mAhg~(-1) is among the highest reversible capacities reported for a Sn-based NIB anode, while 381 mAhg~(-1) represents the optimum fast charge value. HRTEM shows that Sn50Ge25Sb25 is a composite of 10-15 nm Sn and Sn-alloyed Ge nanocrystallites that are densely dispersed within an amorphous matrix. Comparing the microstructures of alloys where the capacity significantly exceeds the rule of mixtures prediction to those where it does not leads us to hypothesize that this new phenomenon originates from the Ge(Sn) that is able to sodiate beyond the 1:1 Na:Ge ratio reported for the pure element. Combined TOF-SIMS, EELS TEM, and FIB analysis demonstrates substantial Na segregation within the film near the current collector interface that is present as early as the second discharge, followed by cycling-induced delamination from the current collector.
机译:在这里,我们提供了关于使用Sn50Ge50,Sb50Ge50和纯Sn,Ge,Sb作为钠离子电池(钠离子电池,又称NIB,NaB或SIB)阳极的几种三元Sn-Ge-Sb薄膜合金组成的首次报告。 Sn33Ge33Sb33,Sn50Ge25Sb25,Sn60Ge20Sb20和Sn50Ge50均表现出良好的电化学性能,其中Sn50Ge25Sb25总体上表现最佳。经过50次充放电循环,该合金的初始可逆比容量为833 mAhg〜(-1)(在85 mAg〜(-1)时)和662 mAhg〜(-1)。 Sn50Ge25Sb25还具有出色的速率能力,在8500 mAg〜(-1)(〜10C)的电流密度下显示出381 mAhg〜(-1)的稳定容量。对已发表文献的调查表明,833 mAhg〜(-1)是最佳的快速充电值,其中833 mAhg〜(-1)是Sn基NIB阳极报道的最高可逆容量。 HRTEM显示,Sn50Ge25Sb25是由10-15 nm的Sn和Sn合金化的Ge纳米微晶组成的复合物,它们密集地分散在非晶基质中。比较容量显着超过混合物预测规则的合金的微观结构与不使混合物无法预测的微观结构,使我们假设这种新现象源自能够以超过1:1 Na:Ge比的形式生成的Ge(Sn)。报告为纯元素。结合的TOF-SIMS,EELS TEM和FIB分析表明,早在第二次放电时,就在集电器界面附近的薄膜中存在大量的Na偏析,最早出现在第二次放电中,然后循环诱导从集电器中分层。

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