Growth of MoS2(1-x)Se2x (x=0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition

摘要

Transition-metal dichalcogenide (TMD) monolayer alloys are a branch of two-dimensional (2D) materials which can have large-range band gap tuning as the composition changes. Synthesis of 2D TMD monolayer alloys with controlled composition as well as controlled domain size and edge structure is of great challenge. In the present work, we report growth of MoS2(1-x)Se2x monolayer alloys (x = 0.41-1.00) with controlled morphology and large domain size using physical vapor deposition (PVD). MoS2(1-x)Se2x, monolayer alloys with different edge orientations (Mo-zigzag and S/Se-zigzag edge orientations) have been obtained by controlling the deposition temperature. Large domain size of MoS2(1-x)Se2x monolayer alloys (x = 0.41-1.00) up to 20 mu m have been obtained by tuning the temperature gradient in the deposition zone. Together with previously obtained MoS2(1-x)Se2x monolayer alloys (x = 0-0.40), the band gap photoluminescence (PL) is continuously tuned from 1.86 eV (i.e., 665 nm, reached at x = 0.00) to 1.55 eV (i.e., 800 nm, reached at x = 1.00). Additionally, Raman peak splitting was observed in MoS2(1-x)Se2x monolayer alloys. This work provides a way to synthesize MoS2(1-x)Se2x monolayer alloys with different edge orientations, which could be benefit to controlled growth of other 2D materials.