Core-shell chromium silicide - silicon nanopillars: A contact material for future nanosystems

摘要

Chromium silicide nanostructures are fabricated inside silicon nanopillars grown by the vapor - liquid - solid mechanism. The remarkable field-emission behavior of these nanostructures results from extensive improvement of carrier transport due to the reduced energy barrier between the metal and semiconductor layers. The results warrant consideration of chromium silicide as a potentially important contact material in future nanosystems.