Electroluminescence from electrolyte-gated carbon nanotube field-effect transistors

摘要

We demonstrate near-infrared electroluminescence from ambipolar, electrolyte-gated arrays of highly aligned single-walled carbon nanotubes (SWNT). Using electrolytes instead of traditional oxide dielectrics in carbon nanotube field-effect transistors (FET) facilitates injection and accumulation of high densities of holes and electrons at very low gate voltages with minimal current hysteresis. We observe numerous emission spots each corresponding to individual nanotubes in the array. The positions of these spots indicate the meeting point of the electron and hole accumulation zones determined by the applied gate and source-drain voltages. The movement of emission spots with gate voltage yields information about relative band gaps, contact resistance, defects, and interaction between carbon nanotubes within the array. Introducing thin layers of HfO_2 and TiO_2 provides a means to modify exciton screening without fundamentally changing the current-voltage characteristics or electroluminescence yield of these devices.