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Auger Recombination of Biexcitons and Negative and Positive Trions in Individual Quantum Dots

机译:量子点中双激子和负正三元的俄歇复合。

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Charged exciton states commonly occur both in spectroscopic studies of quantum dots (QDs) and during operation of QD-based devices. The extra charge added to the neutral exciton modifies its radiative decay rate and also opens an additional nonradiative pathway associated with an Auger process whereby the recombination energy of an exciton is transferred to the excess charge. Here we conduct single-dot spectroscopic studies of Auger recombination in thick-shell ("giant") CdSe/CdS QDs with and without an interfacial alloy layer using time-tagged, time-correlated single-photon counting. In photoluminescence (PL) intensity trajectories of some of the dots, we resolve three distinct states of different emissivities ("bright", "gray", and "dark") attributed, respectively, to the neutral exciton and negative and positive trions. Simultaneously acquired PL lifetime trajectories indicate that the positive trion is much shorter lived than the negative trion, which can be explained by a high density of valence band states and a small hole localization radius (defined by the QD core size), factors that favor an Auger process involving intraband excitation of a hole. A comparison of trion and biexciton lifetimes suggests that the biexciton Auger decay can be treated in terms of a superposition of two independent channels associated with positive- and negative-trion pathways. The resulting interdependence between Auger time constants might simplify the studies of multicarrier recombination by allowing one, for example, to infer Auger lifetimes of trions of one sign based on the measurements of biexciton decay and dynamics of the trions of the opposite sign or, alternatively, estimate the biexciton lifetime based on studies of trion dynamics.
机译:带电的激子态通常发生在量子点(QD)的光谱研究中以及基于QD的设备的操作过程中。添加到中性激子的额外电荷会改变其辐射衰减率,并且还会打开与俄歇过程相关的其他非辐射路径,从而将激子的重组能转移到过量电荷上。在这里,我们使用带有时间标记的,与时间相关的单光子计数,对带有或不带有界面合金层的厚壳CdSe / CdS QD中的俄歇重组进行单点光谱研究。在某些点的光致发光(PL)强度轨迹中,我们解析了分别归因于中性激子以及正负子的三个不同发射率(“亮”,“灰色”和“暗”)的三个不同状态。同时获得的PL寿命轨迹表明,正三重子的寿命比负三重子的寿命短得多,这可以用价带态的高密度和小空穴定位半径(由QD核尺寸定义)来解释。涉及孔内带内激励的俄歇过程。 Trion和biexciton寿命的比较表明,可以通过与正负Trion途径相关的两个独立通道的叠加来处理Biexciton Auger衰变。由此产生的俄歇时间常数之间的相互依存关系可能会简化多载波重组的研究,方法是,例如允许根据双激子衰减的测量值和对号相反的重子的动力学来推断一个正负号的tri子的俄歇寿命。根据对Trion动力学的研究估算双激子寿命。

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