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Pore directionality and correlation lengths of mesoporous silica channels aligned by physical epitaxy

机译:物理外延对准介孔二氧化硅通道的孔隙方向性和相关长度

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Herein we report on the alignment of mesoporous silica, a potential host for sub-10 nm nanostructures, by controlling its deposition within patterned substrates. In-depth characterization of the correlation lengths (length of a linear porous channel), defects of the porous network (delamination), and how the silica mesopores register to the micrometer-sized substrate pattern was achieved by means of novel focused ion beam (FIB) sectioning and in situ SEM imaging, which to our knowledge has not previously been reported for such a system. Our findings establish that, under confinement, directed deposition of the sol within channeled substrates, where the cross-sectional aspect ratio of the channels approaches unity, induces alignment of the mesopores along the length of the channels. The pore correlation length was found to extend beyond the micrometer scale, with high pore uniformity from channel to channel observed with infrequent delamination defects. Such information on pore correlation lengths and defect densities is critical for subsequent nanowire growth within the mesoporous channels, contact layout (electrode deposition etc.), and possible device architectures.
机译:本文中,我们通过控制介孔二氧化硅在图案化基材中的沉积,报道了介孔二氧化硅的排列,介孔二氧化硅是亚10纳米结构的潜在宿主。通过新型聚焦离子束(FIB)可以深入表征相关长度(线性多孔通道的长度),多孔网络的缺陷(分层)以及二氧化硅介孔如何对准微米尺寸的基底图案)切片和原位SEM成像,据我们所知,以前尚未针对此类系统进行过报道。我们的发现证实,在受限的条件下,溶胶在通道的横截面纵横比趋于一致的情况下直接沉积在通道基质中,会引起中孔沿通道长度的排列。发现孔的相关长度超出了微米级,观察到的通道之间的孔均匀性高,很少出现分层缺陷。这样的关于孔相关长度和缺陷密度的信息对于随后的中孔通道内纳米线的生长,触点布局(电极沉积等)以及可能的器件结构至关重要。

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